SM6T
Characteristics
Figure 6.
Capacitance versus reverse
applied voltage for unidirectional
types (typical values)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
Figure 7.
Capacitance versus reverse applied
voltage for bidirectional types
(typical values)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
SM6T6V8CA
10000
C (pF)
C (pF)
10000
SM6T6V8A
1000
SM6T15A
SM6T30A
1000
SM6T15CA
SM6T30CA
SM6T68CA
100
SM6T68A
SM6T100A
100
SM6T100CA
SM6T220CA
10
1
10
V R (V)
100
SM6T220A
V R (V)
10
1000
1
10
100
1000
Figure 8.
Peak forward voltage drop versus
peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.0E+02
I
FM
(A)
1.00
Zth (j-a)/Rth (j-a)
Recommended pad layout
Printed circuit board FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
T
j
=25 °C
1.0E+00
0.10
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tp
s
1.0E+02
1.0E+03
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
R
th(j-a)
(°C/W)
110
100
90
80
70
60
Figure 11. Leakage current versus junction
temperature (typical values)
I
R
(nA)
1.E+03
(printed circuit board FR4,
copper thickness = 35 µm)
1.E+02
V
R
=V
RM
V
RM
< 10 V
1.E+01
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
Cu
(cm²)
1.E+00
V
R
=V
RM
V
RM
≥
10 V
T
j
(° C)
1.E-01
25
50
75
100
125
150
Doc ID 3082 Rev 9
5/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
