SM6Txx
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
I
RM
@ V
RM
Types
Uni
Mar-
directional king
SM6T6V8A DE
SM6T7V5A DG
SM6T10A DP
SM6T12A DT
SM6T15A DX
SM6T18A EE
SM6T22A EK
SM6T24A EM
SM6T27A EP
SM6T30A ER
SM6T33A ET
SM6T36A EV
SM6T39A EX
SM6T68A FQ
SM6T75A FS
SM6T100A FY
SM6T150A GL
SM6T200A GU
SM6T220A GW
Bi
directional
SM6T6V8CA
SM6T7V5CA
SM6T10CA
SM6T12CA
SM6T15CA
SM6T18CA
SM6T22CA
SM6T24CA
SM6T27CA
SM6T30CA
SM6T33CA
SM6T36CA
SM6T39CA
SM6T68CA
SM6T75CA
SM6T100CA
SM6T150CA
SM6T200CA
SM6T220CA
max
Mar-
µA
king
LE 1000
LG
500
LP
10
LT
5
LX
1
ME
1
MK
1
MM
1
MP
1
MR
1
MT
1
MV
1
MX
1
NQ
1
NS
1
NY
1
OL
1
OU
1
OW
1
V
5.8
6.4
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
64.1
85.5
128
171
188
V
BR
@
I
R
V
CL
@ I
PP
max
10/1000µs
V
A
10.5 57
11.3 53
14.5 41
16.7 36
21.2 28
25.2 24
30.6 20
33.2 18
37.5 16
41.5 14.5
45.7 13.1
49.9 12
53.9 11.1
92
6.5
103 5.8
137 4.4
207 2.9
274 2.2
328
2
I PP
VCL
VBR
V RM
VF
I RM
V
IF
I
α
T
V
F
V
CL
@ I
PP
max
8/20µs
V
A
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
134
178
265
353
388
298
276
215
184
147
123
102
93
83
75
68
62
57
33
30
22.5
15
11.3
10.3
αT
C
min nom max
note2
V
V
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
71.3
95.0
143
190
209
6.8
7.5
10
12
15
18
22
24
27
30
33
36
39
68
-
100
150
200
220
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
78.8
105
158
210
231
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
max
typ
note3 note4
10
-4
/°C pF
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.5
10.6
10.8
10.8
10.8
4000
3700
2800
2300
1900
1600
1350
1250
1150
1075
1000
950
900
625
575
500
400
350
330
% I
PP
100
10 s
Fig. 1:
Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
PULSE WAVEFORM 10/1000 s
50
0
1000 s
t
Note 2 :
Note 3 :
Note 4 :
Pulse test : tp < 50 ms.
∆V
BR =
αT
* (Tamb - 25) * VBR(25°C).
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
2/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
