NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
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HIGH DENSITY NAND FLASH MEMORIES
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Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
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NAND INTERFACE
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TSOP48 12 x 20mm
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SUPPLY VOLTAGE
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PAGE SIZE
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x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
Random access: 12µs (max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
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USOP48 12 x 17 x 0.65mm
FBGA
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BLOCK SIZE
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VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
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PAGE READ / PROGRAM
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DATA INTEGRITY
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100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
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COPY BACK PROGRAM MODE
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FAST BLOCK ERASE
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Block erase time: 2ms (Typ)
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RoHS COMPLIANCE
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STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
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Simple interface with microcontroller
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SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
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Program/Erase locked during Power
transitions
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DEVELOPMENT TOOLS
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February 2005
1/57
STMICROELECTRONICS [ STMICROELECTRONICS ]
