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NAND256R4A0AZA6F 参数 Datasheet PDF下载

NAND256R4A0AZA6F图片预览
型号: NAND256R4A0AZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 [128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 57 页 / 916 K
品牌: STMICROELECTRONICS [ ST ]
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A  
SUMMARY DESCRIPTION  
The NAND Flash 528 Byte/ 264 Word Page is a  
family of non-volatile Flash memories that uses  
the Single Level Cell (SLC) NAND cell technology.  
It is referred to as the Small Page family. The de-  
vices range from 128Mbits to 1Gbit and operate  
with either a 1.8V or 3V voltage supply. The size of  
a Page is either 528 Bytes (512 + 16 spare) or 264  
Words (256 + 8 spare) depending on whether the  
device has a x8 or x16 bus width.  
The address lines are multiplexed with the Data In-  
put/Output signals on a multiplexed x8 or x16 In-  
put/Output bus. This interface reduces the pin  
count and makes it possible to migrate to other  
densities without changing the footprint.  
The devices are available in the following packag-  
es:  
TSOP48 12 x 20mm for all products  
USOP48 12 x 17 x 0.65mm for 128Mb, 256Mb  
and 512Mb products  
VFBGA55 (8 x 10 x 1mm, 6 x 8 ball array,  
0.8mm pitch) for 128Mb and 256Mb products  
TFBGA55 (8 x 10 x 1.2mm, 6 x 8 ball array,  
0.8mm pitch) for 512Mb Dual Die product  
VFBGA63 (9 x 11 x 1mm, 6 x 8 ball array,  
0.8mm pitch) for the 512Mb product  
TFBGA63 (9 x 11 x 1.2mm, 6 x 8 ball array,  
0.8mm pitch) for the 1Gb Dual Die product  
Each block can be programmed and erased over  
100,000 cycles. To extend the lifetime of NAND  
Flash devices it is strongly recommended to imple-  
ment an Error Correction Code (ECC). A Write  
Protect pin is available to give a hardware protec-  
tion against program and erase operations.  
The devices feature an open-drain Ready/Busy  
output that can be used to identify if the Program/  
Erase/Read (P/E/R) Controller is currently active.  
The use of an open-drain output allows the Ready/  
Busy pins from several memories to be connected  
to a single pull-up resistor.  
A Copy Back command is available to optimize the  
management of defective blocks. When a Page  
Program operation fails, the data can be pro-  
grammed in another page without having to re-  
send the data to be programmed.  
Two options are available for the NAND Flash  
family:  
Chip Enable Don’t Care, which allows code to be  
directly downloaded by a microcontroller, as Chip  
Enable transitions during the latency time do not  
stop the read operation.  
A Serial Number, which allows each device to be  
uniquely identified. The Serial Number options is  
subject to an NDA (Non Disclosure Agreement)  
and so not described in the datasheet. For more  
details of this option contact your nearest ST Sales  
office.  
For information on how to order these options refer  
to Table 28., Ordering Information Scheme. De-  
vices are shipped from the factory with Block 0 al-  
ways valid and the memory content bits, in valid  
blocks, erased to ’1’.  
See Table 2., Product Description, for all the de-  
vices available in the family.  
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