MMBT2907A
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
357.1
o
C/W
•
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEX
I
BEX
I
CBO
Parameter
Collector Cut-off
Current (V
BE
= -3 V)
Base Cut-off Current
(V
BE
= -3 V)
Collector Cut-off
Current (I
E
= 0)
Test Conditions
V
CE
= -30 V
V
CE
= -30 V
V
CB
= -50 V
I
C
= -10 mA
-60
Min.
Typ.
Max.
-50
-50
-10
Unit
nA
nA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Collector-Base
Saturation Voltage
DC Current Gain
I
C
= -10
µA
-60
V
V
(BR)EBO
I
E
= -10
µA
-5
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= -150 mA
I
C
= -500 mA
I
C
= -150 mA
I
C
= -500 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
-0.1 mA
-1 mA
-10 mA
-150 mA
-500 mA
I
B
= -15 mA
I
B
= -50 mA
I
B
= -15 mA
I
B
= -50 mA
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
V
CE
= -10 V
f = 1 MHz
f = 1 MHz
75
100
100
100
50
200
-0.4
-1.6
-1.3
-2.6
V
V
V
V
300
MHz
8
30
10
40
45
pF
pF
ns
ns
ns
ns
30
220
ns
ns
f
T
C
CBO
C
EBO
t
d
t
r
t
on
t
s
t
f
t
off
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Delay Time
Rise Time
Switching On Time
Storage Time
Fall Time
Switching Off Time
I
C
= -50 mA V
CE
= -20V f = 100MHz
I
E
= 0
I
C
= 0
V
CB
= -10 V
V
EB
= -2 V
I
C
= -150 mA
V
CC
= -30V
I
B
= -15 mA
I
C
= -150 mA
V
CC
= -30V
I
B1
= -I
B2
= -15mA
190
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
