MC33079
Table 3.
Symbol
φm
e
n
i
n
THD
ELECTRICAL CHARACTERISTICS
V
CC+
= +15V, V
CC-
= -15V, T
amb
= 25°C (unless otherwise specified)
Parameter
Phase Margin (R
L
= 2kΩ), C
L
= 0pF
C
L
= 100pF
Equivalent Input Noise Voltage (R
S
= 100Ω, f = 1kHz)
Equivalent Input Noise Current (f = 1kHz)
Total Harmonic Distortion (R
L
= 2kΩ, f = 20Hz to 20kHz,
V
o
= 3V
rms
, A
V
= +1)
Min.
Typ.
55
30
4.5
0.5
0.002
120
120
37
175
12
Max.
Unit
Degrees
nV
-----------
-
Hz
pA
-----------
-
Hz
%
dB
kHz
Ω
kΩ
pF
V
O1
/V
O2
Channel Separation (f = 20Hz to 20kHz)
FPB
Z
o
R
i
C
i
Full Power Bandwidth (V
o
= 27V
pp
, R
L
= 2kΩ, THD
≤
1%)
Output Impedance (V
o
= 0V, f = 9MHz)
Input Resistance (V
ic
= 0V)
Input Capacitance (V
ic
= 0V)
Table 4.
Symbol
V
io
A
vd
I
CC
V
icm
V
opp
I
sink
I
source
GBP
SR
φm
V
CC+
= +15V, V
CC
- = -15V, T
amb
= 25°C (unless otherwise specified)
Conditions
Value
0
R
L
= 2kΩ, Vo = ±10V
No load, per operator
∆V
io
= 5mV, V
O
= 0V
R
L
= 2kΩ
V
O
= 0V
V
O
= 0V
R
L
= 2kΩ, C
L
= 100pF
R
L
= 10kΩ, C
L
= 100pF, A
v
= +1
R
L
= 2kΩ, C
L
= 0pF
100
2
28
28.2
37
29
15
7
55
Unit
mV
dB
mA
V
V
mA
mA
MHz
V/µs
Degrees
5/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
