M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Features summary
Supply Voltage
–
V
CC
= 2.7V to 3.6V for Program, Erase,
Read
–
V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
–
Page Width: 4 Words
–
Page Access: 25ns
–
Random Access: 60ns, 70ns
Programming Time
–
10
µs
per Byte/Word typical
–
4 Words/8 Bytes Program
135 memory blocks
–
1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
–
127 Main Blocks, 64 KBytes each
Program/Erase Controller
–
Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
–
Read from any Block during Program
Suspend
–
Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
–
Faster Production/Batch Programming
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
–
64-bit Security Code
Extended Memory Block
–
Extra block used as security block or to
store additional information
Low power consumption
–
Standby and Automatic Standby
100,000 Program/Erase cycles per block
Figure 1.
Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6x8mm
Electronic Signature
–
Manufacturer Code: 0020h
Table 1.
Device Codes
Device Code
22EDh
22FDh
Root Part Number
M29W640FT
M29W640FB
ECOPACK
®
packages
December 2005
Rev3
1/72
1