M29W320DT
M29W320DB
32 Mbit (4Mb x8 or 2Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
■
■
Figure 1. Packages
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
67 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
FBGA
■
TSOP48 (N)
12 x 20mm
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TFBGA63 (ZA)
TFBGA48 (ZE)
■
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
■
■
■
■
■
■
August 2005
1/46
STMICROELECTRONICS [ STMICROELECTRONICS ]
