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M29W320EB70N6E 参数 Datasheet PDF下载

M29W320EB70N6E图片预览
型号: M29W320EB70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(4MB X8或X16的2Mb ,引导块) 3V供应闪存 [32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 46 页 / 887 K
品牌: STMICROELECTRONICS [ ST ]
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M29W320ET, M29W320EB  
Table 24. CFI Query System Interface Information  
Address  
Data  
Description  
Value  
x16  
x8  
V
V
V
V
Logic Supply Minimum Program/Erase voltage  
bit 7 to 4BCD value in volts  
bit 3 to 0BCD value in 100 mV  
CC  
1Bh  
36h  
0027h  
0036h  
00B5h  
00C5h  
2.7V  
3.6V  
Logic Supply Maximum Program/Erase voltage  
bit 7 to 4BCD value in volts  
bit 3 to 0BCD value in 100 mV  
CC  
1Ch  
1Dh  
1Eh  
38h  
3Ah  
3Ch  
[Programming] Supply Minimum Program/Erase voltage  
bit 7 to 4HEX value in volts  
bit 3 to 0BCD value in 100 mV  
PP  
11.5V  
12.5V  
[Programming] Supply Maximum Program/Erase voltage  
bit 7 to 4HEX value in volts  
PP  
bit 3 to 0BCD value in 100 mV  
n
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0004h  
0000h  
000Ah  
0000h  
0004h  
0000h  
0003h  
0000h  
16µs  
NA  
Typical timeout per single byte/word program = 2 µs  
n
Typical timeout for minimum size write buffer program = 2 µs  
n
1s  
Typical timeout per individual block erase = 2 ms  
n
NA  
Typical timeout for full Chip Erase = 2 ms  
n
256 µs  
NA  
Maximum timeout for byte/word program = 2 times typical  
n
Maximum timeout for write buffer program = 2 times typical  
n
8 s  
Maximum timeout per individual block erase = 2 times typical  
n
NA  
Maximum timeout for Chip Erase = 2 times typical  
Table 25. Device Geometry Definition  
Address  
Data  
Description  
Value  
x16  
x8  
n
27h  
4Eh  
0016h  
4 MByte  
Device Size = 2 in number of bytes  
28h  
29h  
50h  
52h  
0002h  
0000h  
x8, x16  
Async.  
Flash Device Interface Code description  
2Ah  
2Bh  
54h  
56h  
0000h  
0000h  
n
NA  
2
Maximum number of bytes in multi-byte program or page = 2  
Number of Erase Block Regions. It specifies the number of  
2Ch  
58h  
0002h  
regions containing contiguous Erase Blocks of the same size.  
2Dh  
2Eh  
5Ah  
5Ch  
0007h  
0000h  
Region 1 Information  
Number of Erase Blocks of identical size = 0007h+1  
8
2Fh  
30h  
5Eh  
60h  
0020h  
0000h  
Region 1 Information  
Block size in Region 1 = 0020h * 256 byte  
8Kbyte  
63  
31h  
32h  
62h  
64h  
003Eh  
0000h  
Region 2 Information  
Number of Erase Blocks of identical size = 003Eh+1  
33h  
34h  
66h  
68h  
0000h  
0001h  
Region 2 Information  
Block size in Region 2 = 0100h * 256 byte  
64Kbyte  
Note: For the M29W320EB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh. For  
the M29W320ET, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh.  
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