M29W320ET
M29W320EB
32 Mbit (4Mb x8 or 2Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
– V
PP
=12V for Fast Program (optional)
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Memory Array: 63 Main Blocks
– 8 Parameter Blocks (Top or Bottom
Location)
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W320ET: 2256h
– Bottom Device Code M29W320EB: 2257h
Figure 1. Packages
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TSOP48 (N)
12 x 20mm
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FBGA
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TFBGA48 (ZE)
6 x 8mm
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March 2005
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STMICROELECTRONICS [ STMICROELECTRONICS ]
