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M29F200T-90N1R 参数 Datasheet PDF下载

M29F200T-90N1R图片预览
型号: M29F200T-90N1R
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位256Kb的X8或X16 128KB ,引导块单电源闪存 [2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 33 页 / 227 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M29F200T
M29F200B
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
5V±10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
– 10
µ
s by Byte / 16
µ
s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F200T: 00D3h
– Device Code, M29F200B: 00D4h
DESCRIPTION
The M29F200 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 5V V
CC
supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application.
July 1998
44
1
TSOP48 (N)
12 x 20 mm
SO44 (M)
Figure 1. Logic Diagram
VCC
17
A0-A16
W
E
G
RP
M29F200T
M29F200B
15
DQ0-DQ14
DQ15A–1
BYTE
RB
VSS
AI01986
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