M27C4001
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 5% or 5V ± 10%; V
PP
= V
CC
)
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
IL
V
IH (2)
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
I
OL
= 2.1mA
I
OH
= –400µA
I
OH
= –100µA
2.4
V
CC
– 0.7V
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
E = V
IH
E > V
CC
– 0.2V
V
PP
= V
CC
–0.3
2
Min
Max
±10
±10
30
1
100
10
0.8
V
CC
+ 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 5% or 5V ± 10%; V
PP
= V
CC
)
M27C4001
Symbol
Alt
Parameter
Test Condition
-35
(3)
Min
t
AVQV
t
ELQV
t
GLQV
t
EHQZ (2)
t
GHQZ (2)
t
AXQX
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
Address Valid to
Output Valid
Chip Enable Low to
Output Valid
Output Enable Low to
Output Valid
Chip Enable High to
Output Hi-Z
Output Enable High to
Output Hi-Z
Address Transition to
Output Transition
E = V
IL
, G = V
IL
G = V
IL
E = V
IL
G = V
IL
E = V
IL
E = V
IL
, G = V
IL
0
0
0
Max
35
35
20
30
30
0
0
0
-45
(3)
Min
Max
45
45
25
30
30
0
0
0
-55
(3)
Min
Max
55
55
30
30
30
ns
ns
ns
ns
ns
ns
Unit
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
5/17
STMICROELECTRONICS [ STMICROELECTRONICS ]
