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M27C256B-12F6 参数 Datasheet PDF下载

M27C256B-12F6图片预览
型号: M27C256B-12F6
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(32KB ×8) UV EPROM和OTP EPROM [256 Kbit (32Kb x 8) UV EPROM and OTP EPROM]
分类和应用: 存储内存集成电路PC可编程只读存储器电动程控只读存储器
文件页数/大小: 16 页 / 149 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M27C256B
Figure 6. Programming and Verify Modes AC Waveforms
A0-A14
tAVEL
Q0-Q7
DATA IN
tQVEL
VPP
tVPHEL
VCC
tVCHEL
E
tELEH
G
VALID
DATA OUT
tEHQX
tGLQV
tGHQZ
tGHAX
tQXGL
PROGRAM
VERIFY
AI00759
Figure 7. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
n=0
E = 100µs Pulse
NO
++n
= 25
YES
NO
VERIFY
YES
Last
Addr
NO
++ Addr
FAIL
YES
CHECK ALL BYTES
1st: VCC = 6V
2nd: VCC = 4.2V
AI00760B
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows to pro-
gram the whole array with a guaranteed margin, in
a typical time of 3.5 seconds. Programming with
PRESTO II involves the application of a sequence
of 100µs program pulses to each byte until a cor-
rect verify occurs (see Figure 7). During program-
ming and verify operation, a MARGIN MODE
circuit is automatically activated in order to guar-
antee that each cell is programmed with enough
margin. No overprogram pulse is applied since the
verify in MARGIN MODE provides necessary mar-
gin to each programmed cell.
Program Inhibit
Programming of multiple M27C256Bs in parallel
with different data is also easily accomplished. Ex-
cept for E, all like inputs including G of the parallel
M27C256B may be common. A TTL low level
pulse applied to a M27C256B's E input, with V
PP
at 12.75V, will program that M27C256B. A high
level E input inhibits the other M27C256Bs from
being programmed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correct-
ly programmed. The verify is accomplished with G
at V
IL
, E at V
IH
, V
PP
at 12.75V and V
CC
at 6.25V.
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