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M27C160-100F1 参数 Datasheet PDF下载

M27C160-100F1图片预览
型号: M27C160-100F1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位的2Mb X8或X16的1Mb UV EPROM和OTP EPROM [16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM]
分类和应用: 可编程只读存储器电动程控只读存储器
文件页数/大小: 20 页 / 147 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M27C160
Figure 10. Programming and Verify Modes AC Waveforms
A0-A19
tAVEL
Q0-Q15
DATA IN
tQVEL
BYTEVPP
tVPHAV
VCC
tVCHAV
E
tELEH
G
VALID
DATA OUT
tEHQX
tGLQV
tGHQZ
tGHAX
tQXGL
PROGRAM
VERIFY
AI00744
Figure 11. Programming Flowchart
VCC = 6.25V, VPP = 12.5V
n=0
E = 50µs Pulse
NO
++n
= 25
YES
NO
VERIFY
YES
Last
Addr
NO
++ Addr
FAIL
YES
CHECK ALL WORDS
BYTEVPP =VIH
1st: VCC = 6V
2nd: VCC = 4.2V
AI01044B
PRESTO III Programming Algorithm
The PRESTO III Programming Algorithm allows
the whole array to be programed with a guaran-
teed margin in a typical time of 52.5 seconds. Pro-
gramming with PRESTO III consists of applying a
sequence of 50µs program pulses to each word
until a correct verify occurs (see Figure 11). During
programing and verify operation a MARGIN
MODE circuit is automatically activated to guaran-
tee that each cell is programed with enough mar-
gin. No overprogram pulse is applied since the
verify in MARGIN MODE provides the necessary
margin to each programmed cell.
Program Inhibit
Programming of multiple M27C160s in parallel
with different data is also easily accomplished. Ex-
cept for E, all like inputs including G of the parallel
M27C160 may be common. A TTL low level pulse
applied to a M27C160's E input and V
PP
at 12.5V,
will program that M27C160. A high level E input in-
hibits the other M27C160s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correct-
ly programmed. The verify is accomplished with E
at V
IH
and G at V
IL
, V
PP
at 12.5V and V
CC
at
6.25V.
10/19