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M25PE10-VMN6TG 参数 Datasheet PDF下载

M25PE10-VMN6TG图片预览
型号: M25PE10-VMN6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 37 页 / 483 K
品牌: STMICROELECTRONICS [ ST ]
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M25PE10, M25PE20  
PART NUMBERING  
Table 18. Ordering Information Scheme  
Example:  
M25PE20  
V
MP  
6
T
G
Device Type  
M25PE = Page-Erasable Serial Flash Memory  
Device Function  
10 = 1 Mbit (128K x 8)  
20 = 2 Mbit (256K x 8)  
Operating Voltage  
V = V = 2.7 to 3.6V  
CC  
Package  
MN = SO8N (150 mil width)  
MP = VDFPN8 6x5mm (MLP8)  
Device Grade  
6 = Industrial: device tested with standard test flow over –40 to 85 °C  
Option  
blank = Standard Packing  
T = Tape and Reel Packing  
Plating Technology  
P or G = ECOPACK® (RoHS compliant)  
For a list of available options (speed, package,  
etc.) or for further information on any aspect of this  
device, please contact your nearest ST Sales Of-  
fice.  
The category of second Level Interconnect is  
marked on the package and on the inner box label,  
in compliance with JEDEC Standard JESD97. The  
maximum ratings related to soldering conditions  
are also marked on the inner box label.  
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