DC and ac parameters
M25P40
Table 19. AC characteristics (25 MHz operation, device grade 3, V min = 2.7 V)
CC
Test conditions specified in Table 10 and Table 17
Symbol Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock frequency for the following
fC
fR
fC
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
D.C.
25
20
MHz
Clock frequency for READ instructions
D.C.
18
18
0.1
0.1
10
10
5
MHz
ns
(1)
tCH
tCLH Clock High time
tCLL Clock Low time
(1)
tCL
ns
Clock Rise time(3) (peak to peak)
V/ns
V/ns
ns
(2)
(2)
tCLCH
tCHCL
Clock Fall time(3) (peak to peak)
tCSS S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
tDSU Data In Setup time
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
ns
ns
tDH Data In Hold time
5
ns
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
tCSH S Deselect time
10
10
100
ns
ns
ns
(2)
tSHQZ
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tDIS Output Disable time
15
15
ns
tV
tHO Output Hold time
HOLD Setup time (relative to C)
Clock Low to Output Valid
ns
0
ns
10
10
10
10
ns
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
tLZ HOLD to Output Low-Z
tHZ HOLD to Output High-Z
Write Protect Setup time
ns
ns
ns
(2)
tHHQX
15
20
ns
(2)
tHLQZ
tWHSL
tSHWL
ns
(4)
(4)
20
ns
Write Protect Hold time
100
ns
(2)
tDP
S High to Deep Power-down mode
3
µs
S High to Standby Power mode without
Electronic Signature Read
(2)
tRES1
3 or 30(5)
µs
µs
S High to Standby Power mode with
Electronic Signature Read
(2)
tRES2
1.8 or 30(5)
1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. It is 30 µs in devices produced with the “X” process technology (grade 3 devices are only produced using
the “X” process technology). Details of how to find the process letter on the device marking are given in the
Application note AN1995.
42/53
STMICROELECTRONICS [ ST ]
