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M25P16-VMW6TG 参数 Datasheet PDF下载

M25P16-VMW6TG图片预览
型号: M25P16-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,低电压,串行闪存,具有50 MHz SPI总线接口 [16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface]
分类和应用: 闪存存储
文件页数/大小: 55 页 / 488 K
品牌: STMICROELECTRONICS [ ST ]
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Revision history  
M25P16  
Table 24. Document revision history (continued)  
Date  
Revision  
Changes  
Page Program, Sector Erase and Bulk Erase updated in Features.  
VIO max modified in Table 9: Absolute maximum ratings.  
Table 16: AC characteristics (Grade 6, T9HX (0.11µm) technology)  
added.  
10-Oct-2006  
9
VFQFPN8 package specifications updated (see Table 18). Note 1 added  
to Table 19. Note: on page 52 modified.  
Small text changes. Hardware Write protection added to Features.  
VCC supply voltage and VSS ground signal descriptions added. Figure 4:  
Bus master and memory devices on the SPI bus modified, note 2  
removed and replaced by an explanatory paragraph. Write In Progress bit  
behavior specified at Power-up (see Section 7: Power-up and Power-  
down). TLEAD added to Table 9: Absolute maximum ratings. Grade 3  
temperature range added.  
09-Jan-2006  
10  
Table 11: Data retention and endurance and Table 17: AC characteristics  
(25 MHz operation, Grade 3) added.  
SO8W and VFQFPN8 package specifications updated (see Section 11:  
Package mechanical).  
54/55  
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