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M24C04-BN3TG 参数 Datasheet PDF下载

M24C04-BN3TG图片预览
型号: M24C04-BN3TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16Kbit的, 8Kbit , 4k位, 2Kbit和1K位,串行I²C总线EEPROM [16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 29 页 / 484 K
品牌: STMICROELECTRONICS [ ST ]
 浏览型号M24C04-BN3TG的Datasheet PDF文件第9页浏览型号M24C04-BN3TG的Datasheet PDF文件第10页浏览型号M24C04-BN3TG的Datasheet PDF文件第11页浏览型号M24C04-BN3TG的Datasheet PDF文件第12页浏览型号M24C04-BN3TG的Datasheet PDF文件第14页浏览型号M24C04-BN3TG的Datasheet PDF文件第15页浏览型号M24C04-BN3TG的Datasheet PDF文件第16页浏览型号M24C04-BN3TG的Datasheet PDF文件第17页  
M24C16, M24C08, M24C04, M24C02, M24C01  
MAXIMUM RATING  
Stressing the device above the rating listed in the  
Absolute Maximum Ratings" table may cause per-  
manent damage to the device. These are stress  
ratings only and operation of the device at these or  
any other conditions above those indicated in the  
Operating sections of this specification is not im-  
plied. Exposure to Absolute Maximum Rating con-  
ditions for extended periods may affect device  
reliability. Refer also to the STMicroelectronics  
SURE Program and other relevant quality docu-  
ments.  
Table 4. Absolute Maximum Ratings  
Symbol  
Parameter  
Min.  
Max.  
Unit  
°C  
°C  
V
TSTG  
Storage Temperature  
–65  
150  
1
TLEAD  
VIO  
Lead Temperature during Soldering  
Input or Output range  
See note  
–0.50  
–0.50  
–4000  
6.5  
6.5  
VCC  
Supply Voltage  
V
2
VESD  
4000  
V
Electrostatic Discharge Voltage (Human Body model)  
®
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK 7191395 specification, and  
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU  
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )  
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