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LM393DT 参数 Datasheet PDF下载

LM393DT图片预览
型号: LM393DT
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗双电压比较器 [Low power dual voltage comparators]
分类和应用: 比较器放大器放大器电路光电二极管PC
文件页数/大小: 15 页 / 234 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
LM193, LM293, LM393
3
Table 3.
Symbol
Electrical characteristics
V
CC+
= +5V, V
CC-
= 0V, T
amb
= +25°C (unless otherwise specified)
Parameter
Input offset voltage
(1)
T
min
T
amb
T
max
Input offset current
T
min
T
amb
T
max
Input bias current (I
+
or I
-
)
(2)
T
min
T
amb
T
max
Large signal voltage gain
V
CC
= 15V, R
L
= 15kΩ, V
o
= 1V to 11V
Supply current (all comparators)
V
CC
= +5V, no load
V
CC
= +30V, no load
Differential input voltage
(3)
Low level output voltage
V
id
= -1V, I
sink
= 4mA
T
min
T
amb
T
max
High level output current
V
CC
= V
o
= 30V, V
id
= 1V
T
min
T
amb
T
max
Output sink current V
id
= 1V, V
o
= 1.5V
Response time
(4)
R
L
= 5.1kΩ connected to V
CC+
Large signal response time
R
L
= 5.1kΩ connected to V
CC+
, e
l
= TTL,
V
(ref)
= +1.4v
6
250
50
LM193A - LM293A
LM393A
Min.
V
io
I
io
I
ib
A
vd
Typ.
1
3
25
Max.
2
4
25
100
100
300
50
LM193- LM293
LM393
Min
Typ.
1
5
25
Max.
5
9
50
150
250
400
mV
nA
nA
V/mV
Unit
200
200
I
CC
V
id
V
OL
0.4
1
1
2.5
V
CC+
400
700
0.4
1
1
2.5
V
CC+
mA
250
400
700
mV
I
OH
I
sink
t
re
t
rel
0.1
1
16
1.3
6
0.1
1
16
1.3
nA
μA
mA
μs
ns
300
300
1. At output switch point, V
o
1.4 V, R
s
= 0 with V
CC+
from 5 V to 30 V, and over the full common-mode range (0 V to
V
CC+
-1.5 V).
2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant,
independent of the state of the output, so no loading charge exists on the reference of input lines.
3. The response time specified is for a 100 mV input step with 5 mV overdrive. For larger overdrive signals 300 ns can be
obtained.
4. Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the
common-mode range, the comparator will provide a proper output state. The low input voltage state must not be less than
-0.3 V (or 0.3 V below the negative power supply, if used).
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