LM124 - LM224 - LM324
ELECTRICAL CHARACTERISTICS
(continued)
Symbol
V
OH
Parameter
High Level Output Voltage
(V
CC
= +30V)
T
amb
= +25
o
C
T
min
.
≤
T
amb
≤
T
max
.
o
T
amb
= +25 C
T
min
.
≤
T
amb
≤
T
max
.
(V
CC
= +5V, R
L
= 2kΩ)
o
T
amb
= +25 C
T
min
.
≤
T
amb
≤
T
max
.
LM124 - LM224 - LM324
Min.
26
26
27
27
3.5
3
mV
5
20
20
V/µs
0.4
MHz
1.3
%
0.015
40
7
10
120
30
200
nV
Hz
√
µV/
o
C
pA/
o
C
dB
Typ.
27
28
Max.
Unit
V
R
L
= 2kΩ
R
L
= 10kΩ
V
OL
Low Level Output Voltage (R
L
= 10kΩ)
o
T
amb
= +25 C
T
min
.
≤
T
amb
≤
T
max
.
Slew Rate
V
CC
= 15V, V
I
= 0.5 to 3V, R
L
= 2kΩ, C
L
= 100pF,
unity gain)
Gain Bandwidth Product
V
CC
= 30V, f = 100kHz, V
in
= 10mV
R
L
= 2kΩ, C
L
= 100pF
Total Harmonic Distortion
f = 1kHz, A
V
= 20dB, R
L
= 2kΩ, V
O
= 2V
pp
C
L
= 100pF, V
CC
= 30V
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω, V
CC
= 30V
Input Offset Voltage Drift
Input Offset Current Drift
Channel Separation (note 5)
1kHz
≤
f
≤
20kHz
SR
GBP
THD
e
n
DV
io
DI
IO
V
O
1/V
O
2
Notes :
1. Shor t -cir cui t s f rom t he out put t o V
C C
can cause excessi ve heat i ng if V
C C
> 15V. T he maxi mum out put cur rent
is appr oxi mat el y 40mA i ndependent of the magni t ude of V
C C
. D estr ucti ve di ssipat i on can r es ult f r om simul ta-
neous short -cir cuit on al l ampli f iers.
2. The di r ect ion of the i nput cur rent is out of t he IC . Thi s cur r ent is essenti al l y constant, i ndependent of the st ate
of the out put so no l oadi ng change exists on the i nput l i nes.
3. V
o
= 1. 4V , R
s
= 0Ω
,
5V < V
CC +
< 30V , 0 < V
ic
< V
C C +
- 1.5V
4. The i nput common- mode vol t age of eit her i nput si gnal volt age shoul d not be allow ed to go negat i ve by mor e
than 0.3V . T he upper end of the common- mode vol tage r ange i s V
C C +
- 1.5V , but eit her or bot h i nput s can go
to +32V w i thout damage.
5. Due t o the proxi mit y of ex ternal component s insure t hat coupl ing i s not ori gi nat ing vi a str ay capaci t ance be-
tw een these ext ernal par t s. T hi s t ypi call y can be detect ed as t his t ype of capaci tance i ncreases at higher f re-
quences.
6. This input cur rent onl y exi sts w hen t he volt age at any of t he i nput leads is dr iven negat ive. It i s due t o t he
coll ect or - base juncti on of t he i nput PN P transistor becomi ng forw ar d biased and ther eby act ing as input di-
odes clamps. I n addit i on to thi s di ode act i on, there i s al so N PN par asit i c act ion on the I C chip. t hi s t ransi st or
acti on can cause t he output vol t ages of the Op- amps t o go t o the V
CC
volt age l evel (or to ground f or a l arge
over dri ve) f or t he ti me dur at ion t han an input i s dr iven negati ve.
This i s not destr uct i ve and nor mal out put wi l l set up again f or i nput vol tage higher t han - 0.3V.
4/14
STMICROELECTRONICS [ STMICROELECTRONICS ]
