L7800
ELECTRICAL CHARACTERISTICS FOR L7805C (refer to the test circuits, Tj = 0 to 125 oC,
Vi = 10V, Io = 500 mA, Ci = 0.33 µF, Co = 0.1 µF unlessotherwise specified)
Symbol
Vo
Parameter
Output Voltage
Output Voltage
Test Conditions
Min.
4.8
Typ.
Max.
5.2
Unit
V
Tj = 25 oC
5
5
Vo
Io = 5 mA to 1 A Po ≤ 15 W
4.75
5.25
V
Vi = 7 to 20 V
∆Vo* Line Regulation
∆Vo* Load Regulation
Vi = 7 to 25 V Tj = 25 oC
3
1
100
50
mV
mV
Vi = 8 to 12 V Tj = 25 oC
Io = 5 to 1500 mA
Tj = 25 oC
100
50
mV
mV
Io = 250 to 750 mA T = 25 oC
j
Id
Quiescent Current
Tj = 25 oC
8
mA
mA
∆Id
∆Id
Quiescent Current Change
Quiescent Current Change
Output Voltage Drift
Io = 5 to 1000 mA
Vi = 7 to 25 V
Io = 5 mA
0.5
0.8
mA
mV/oC
∆Vo
∆T
-1.1
40
eN
Output Noise Voltage
B = 10Hz to 100KHz Tj = 25 oC
µV
dB
V
SVR Supply Voltage Rejection
Vi = 8 to 18 V
f = 120 Hz
Tj = 25 oC
62
Vd
Ro
Isc
Dropout Voltage
Io = 1 A
2
Output Resistance
f = 1 KHz
Vi = 35 V
Tj = 25 oC
17
mΩ
mA
A
Short Circuit Current
Short Circuit Peak Current
Tj = 25 oC
750
2.2
Iscp
ELECTRICAL CHARACTERISTICS FOR L7852C (refer to the test circuits, Tj = 0 to 125 oC, Vi = 10V,
Io = 500 mA, Ci = 0.33 µF, Co = 0.1 µF unless otherwise specified)
Symbol
Parameter
Output Voltage
Output Voltage
Test Conditions
Min.
Typ.
Max.
Unit
Vo
Tj = 25 oC
5.0
5.2
5.4
V
Vo
Io = 5 mA to 1 A Po ≤ 15 W
4.95
5.2
5.45
V
Vi = 8 to 20 V
∆Vo* Line Regulation
∆Vo* Load Regulation
Vi = 7 to 25 V Tj = 25 oC
3
1
105
52
mV
mV
Vi = 8 to 12 V Tj = 25 oC
Io = 5 to 1500 mA
Tj = 25 oC
105
52
mV
mV
Io = 250 to 750 mA T = 25 oC
j
Id
Quiescent Current
Tj = 25 oC
8
mA
mA
∆Id
∆Id
Quiescent Current Change
Quiescent Current Change
Output Voltage Drift
Io = 5 to 1000 mA
Vi = 7 to 25 V
Io = 5 mA
0.5
1.3
mA
mV/oC
∆Vo
∆T
-1.0
42
eN
Output Noise Voltage
B = 10Hz to 100KHz Tj = 25 oC
µV
dB
V
SVR Supply Voltage Rejection
Vi = 8 to 18 V
f = 120 Hz
Tj = 25 oC
61
Vd
Ro
Isc
Dropout Voltage
Io = 1 A
2
Output Resistance
f = 1 KHz
Vi = 35 V
Tj = 25 oC
17
mΩ
mA
A
Short Circuit Current
Short Circuit Peak Current
Tj = 25 oC
750
2.2
Iscp
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken into account
separately. Pulce testing with low duty cycle is used.
9/25
STMICROELECTRONICS [ ST ]
