L6917B
ELECTRICAL CHARACTERISTICS
(continued)
V
CC
= 12V ±10%, T
J
= 0 to 70°C unless otherwise specified
Symbol
Parameter
Input Offset
SR
Slew Rate
Test Condition
FBR=1.100V to1.850V;
FBG=GND
VSEN=10pF
Min
-12
15
Typ
Max
12
Unit
mV
V/µs
DIFFERENTIAL CURRENT SENSING
I
ISEN1
,
I
ISEN2
I
PGNDSx
I
ISEN1
,
I
ISEN2
I
FB
Bias Current
Iload=0
45
50
55
µA
µA
µA
µA
µA
Bias Current
Bias Current at
Over Current Threshold
Active Droop Current
Iload<0%
Iload=100%
45
80
50
85
55
90
47.5
0
50
1
52.5
GATE DRIVERS
t
RISE
HGATE
High Side
Rise Time
High Side
Source Current
High Side
Sink Resistance
Low Side
Rise Time
Low Side
Source Current
Low Side
Sink Resistance
V
BOOTx
-V
PHASEx
=10V;
C
HGATEx
to PHASEx=3.3nF
V
BOOTx
-V
PHASEx
=10V
V
BOOTx
-V
PHASEx
=12V;
V
CCDR
=10V;
C
LGATEx
to PGNDx=5.6nF
V
CCDR
=10V
V
CCDR
=12V
0.7
1.5
15
30
ns
I
HGATEx
R
HGATEx
t
RISE
LGATE
I
LGATEx
R
LGATEx
2
2
30
2.5
55
A
Ω
ns
1.8
1.1
1.5
A
Ω
P GOOD and OVP/UVP PROTECTIONS
PGOOD
PGOOD
OVP
UVP
V
PGOOD
Upper Threshold
(V
SEN
/DACOUT)
Lower Threshold
(V
SEN
/DACOUT)
Over Voltage Threshold
(V
SEN
)
Under Voltage Trip
(V
SEN
/DACOUT)
PGOOD Voltage Low
V
SEN
Rising
V
SEN
Falling
V
SEN
Rising
V
SEN
Falling
I
PGOOD
= -4mA
108
84
2.0
56
0.3
60
0.4
112
88
116
92
2.25
64
0.5
%
%
V
%
V
4/33
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