L6562
Table 5. Electrical Characteristics (continued)
(Tj = -25 to 125°C, VCC = 12, CO = 1 nF; unless otherwise specified)
Symbol
Gv
Parameter
Voltage Gain
Test Condition
Open loop
Min.
Typ.
80
Max.
Unit
dB
60
GB
Gain-Bandwidth Product
Source Current
1
MHz
mA
mA
V
ICOMP
VCOMP = 4V, VINV = 2.4 V
COMP = 4V, VINV = 2.6 V
-2
-3.5
4.5
5.7
2.25
-5
Sink Current
V
2.5
5.3
2.1
VCOMP Upper Clamp Voltage
Lower Clamp Voltage
ISOURCE = 0.5 mA
(1)
6
2.4
V
ISINK = 0.5 mA
CURRENT SENSE COMPARATOR
ICS
Input Bias Current
VCS = 0
-1
µA
ns
V
td(H-L)
200
1.7
30
5
350
1.8
Delay to Output
VCS clamp Current sense reference clamp
VCSoffset Current sense offset
VCOMP = Upper clamp
VMULT = 0
1.6
mV
VMULT = 2.5V
ZERO CURRENT DETECTOR
VZCDH Upper Clamp Voltage
IZCD = 2.5 mA
5.0
0.3
5.7
0.65
2.1
6.5
1
V
V
V
VZCDL
VZCDA
Lower Clamp Voltage
IZCD = -2.5 mA
(3)
Arming Voltage
(positive-going edge)
(3)
VZCDT
IZCDb
Triggering Voltage
(negative-going edge)
1.6
2
V
Input Bias Current
µA
VZCD = 1 to 4.5 V
IZCDsrc Source Current Capability
IZCDsnk Sink Current Capability
VZCDdis Disable threshold
-2.5
2.5
-5.5
mA
mA
mV
mV
µA
150
200
75
250
350
VZCDen Restart threshold
IZCDres Restart Current after Disable
30
75
STARTER
130
300
µs
tSTART Start Timer period
OUTPUT OVERVOLTAGE
IOVP
Hys
Dynamic OVP triggering current
Hysteresis
35
40
30
45
µA
µA
V
(3)
(1)
Static OVP threshold
2.1
2.25
2.4
GATE DRIVER
VOH
2
2.6
3
I
GDsource = 20 mA
2.5
0.9
V
V
Dropout Voltage
IGDsource = 200 mA
IGDsink = 200 mA
VOL
1.9
tf
tr
Voltage Fall Time
Voltage Rise Time
30
40
70
80
ns
ns
VOclamp Output clamp voltage
UVLO saturation
IGDsource = 5mA; Vcc = 20V
VCC = 0 to VCCon, Isink=10mA
10
12
15
V
V
1.1
(1) All parameters are in tracking
(2) The multiplier output is given by: Vcs = K VMULT (VCOMP – 2.5)
(3) Parameters guaranteed by design, functionality tested in production.
4/16
STMICROELECTRONICS [ ST ]
