L6562N 参数 Datasheet PDF下载

L6562

the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the

instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the

top of the sinusoid.

To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-

tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a

conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-

regulator - thus making the action of the optimizer circuit little effective.

Figure 23. Typical application circuit (250W, Wide-range mains)

D3 1N5406

T

D8

1N4150

C5 12 nF

R14

100

Ω

R6

68 kΩ

R50 10 k

Ω

C3 2.2 µF

D1

STTH5L06

NTC

2.5

Ω

R11

750 k

Ω

R12

750 k

Ω

Vo=400V

Po=250W

R4

R5

180 kΩ 180 k

Ω

R1

1.5 MΩ

D2

1N5248B

BRIDGE

FUSE

5A/250V

+

STBR606

C1

1 µF

400V

C23

680 nF

R2

1.5 M

Ω

8

3

5

2

1

7

4

R7

10

Ω

C6

100 µF

450V

Vac

(85V to 265V)

-

L6562

6

MOS

STP12NM50

7 °C/W heat sink

C2

10nF

R3

22 kΩ

C29

22 µF

25V

C4

100 nF

R9

0.33

Ω

1W

R10

0.33

Ω

1W

R13

9.53 k

Ω

-

Boost Inductor Spec: EB0057-C (COILCRAFT)

Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic

R4

R5

180 kΩ 180 k

Ω

T

D8

1N4150

C5 12 nF

R14

100

Ω

R6

68 kΩ

R50 12 k

Ω

C3 680 nF

D1

STTH1L06

NTC

2.5

Ω

R11

750 k

Ω

R12

750 k

Ω

Vo=400V

Po=80W

R1

750 kΩ

D2

1N5248B

BRIDGE

FUSE

4A/250V

+

DF06M

C1

0.47 µF

400V

C23

330 nF

R2

750 k

Ω

8

3

5

2

1

7

4

R7

33

Ω

C6

47 µF

450V

Vac

(85V to 265V)

-

L6562

6

MOS

STP8NM50

C2

10nF

R3

10 kΩ

C29

22 µF

25V

C4

100 nF

R9

0.82

Ω

0.6 W

R10

0.82

Ω

0.6 W

R13

9.53 k

Ω

-

Boost Inductor Spec (ITACOIL E2543/E)

E25x13x7 core, 3C85 ferrite

1.5 mm gap for 0.7 mH primary inductance

Primary: 105 turns 20x0.1 mm

Secondary: 11 turns 0.1 mm

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