L6562
the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the
instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the
top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-
tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a
conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-
regulator - thus making the action of the optimizer circuit little effective.
Figure 23. Typical application circuit (250W, Wide-range mains)
D3 1N5406
T
D8
1N4150
C5 12 nF
R14
100
Ω
R6
68 kΩ
R50 10 kΩ
C3 2.2 µF
R12
750 kΩ
D1
STTH5L06
NTC
2.5
Ω
R11
750 kΩ
Vo=400V
Po=250W
R4
R5
180 kΩ 180 kΩ
R1
1.5 MΩ
D2
1N5248B
BRIDGE
FUSE
5A/250V
+
STBR606
C1
1 µF
400V
C23
680 nF
R2
1.5 MΩ
8
3
5
2
1
7
4
R7
10
Ω
C6
100 µF
450V
Vac
(85V to 265V)
-
L6562
6
MOS
STP12NM50
7 °C/W heat sink
C2
10nF
R3
22 kΩ
C29
22 µF
25V
C4
100 nF
R9
0.33Ω
1W
R10
0.33Ω
1W
R13
9.53 kΩ
-
Boost Inductor Spec: EB0057-C (COILCRAFT)
Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic
R4
R5
180 kΩ 180 k
Ω
T
D8
1N4150
C5 12 nF
R14
100
Ω
R6
68 kΩ
R50 12 k
Ω
C3 680 nF
D1
STTH1L06
NTC
2.5
Ω
R11
750 k
Ω
R12
750 k
Ω
Vo=400V
Po=80W
R1
750 kΩ
D2
1N5248B
BRIDGE
FUSE
4A/250V
+
DF06M
C1
0.47 µF
400V
C23
330 nF
R2
750 k
Ω
8
3
5
2
1
7
4
R7
33
Ω
C6
47 µF
450V
Vac
(85V to 265V)
-
L6562
6
MOS
STP8NM50
C2
10nF
R3
10 kΩ
C29
22 µF
25V
C4
100 nF
R9
0.82
Ω
0.6 W
R10
0.82
Ω
0.6 W
R13
9.53 k
Ω
-
Boost Inductor Spec (ITACOIL E2543/E)
E25x13x7 core, 3C85 ferrite
1.5 mm gap for 0.7 mH primary inductance
Primary: 105 turns 20x0.1 mm
Secondary: 11 turns 0.1 mm
10/16
STMICROELECTRONICS [ STMICROELECTRONICS ]
