L272
ABSOLUTE MAXIMUM RATINGS
Symbol
V
s
V
i
V
i
I
o
I
p
P
tot
Supply Voltage
Input Voltage
Differential Input Voltage
DC Output Current
Peak Output Current (non repetitive)
Power Dissipation at:
T
amb
= 80°C (L272), T
amb
= 50°C (L272M), T
case
= 90
°C
(L272D)
T
case
= 75
°C
(L272)
Operating Temperature Range (L272D)
Storage and Junction Temperature
Parameter
Value
28
V
s
±
V
s
1
1.5
1.2
5
– 40 to 85
– 40 to 150
A
A
W
W
°C
°C
Unit
V
T
op
T
stg
, T
j
THERMAL DATA
Symbol
R
th j-case
R
th j-amb
R
th j-alumina
Parameter
Thermal Resistance Junction-pins
Thermal Resistance Junction-ambient
Thermal Resistance Junction-alumina
Max.
Max.
Max.
Powerdip
15
70
–
SO16
–
–
** 50
Minidip
* 70
100
–
Unit
o
o
o
C/W
C/W
C/W
* Thermal resistance junction-pin 4
** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring
15x 20mm; 0.65mm thickness and infinite heatsink.
ELECTRICAL CHARACTERISTICS
(V
S
= 24V, T
amb
= 25
o
C unless otherwise specified)
Symbol
V
s
I
s
I
b
V
os
I
os
SR
B
R
i
G
v
e
N
I
N
CRR
SVR
Parameter
Supply Voltage
Quiescent Drain Current
Input Bias Current
Input Offset Voltage
Input Offset Current
Slew Rate
Gain-bandwidth Product
Input Resistance
O. L. Voltage Gain
Input Noise Voltage
Input Noise Current
Common Mode Rejection
Supply Voltage Rejection
f = 100Hz
f = 1kHz
B = 20kHz
B = 20kHz
f = 1kHz
f = 100Hz, R
G
= 10kΩ, V
R
= 0.5V
V
s
= 24V
V
s
=
±
12V
V
s
=
±
6V
I
p
= 0.1A
I
p
= 0.5A
f = 1 kHz; R
L
=10Ω, G
v
= 30dB
V
s
= 24V
V
s
=
±
6V
f = 1kHz, G
v
= 3 dB, V
s
= 24V, R
L
=
∞
60
500
60
70
50
10
200
75
70
62
56
23
22.5
60
60
0.5
145
%
°C
V
V
dB
V
O
=
V
S
2
V
s
= 24V
V
s
= 12V
Test Conditions
Min.
4
8
7.5
0.3
15
50
1
350
Typ.
Max.
28
12
11
2.5
60
250
Unit
V
mA
mA
µA
mV
nA
V/µs
kHz
kΩ
dB
dB
µV
pA
dB
dB
54
V
o
C
s
Output Voltage Swing
Channel Separation
21
d
T
sd
Distortion
Thermal Shutdown Junction
Temperature
3/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
