®
IRF740
N - CHANNEL 400V - 0.48
Ω
- 10 A - TO-220
PowerMESH™ MOSFET
TYPE
IRF740
s
s
s
s
s
V
DSS
400 V
R
DS(on)
< 0.55
Ω
I
D
10 A
TYPICAL R
DS(on)
= 0.48
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY
™
process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
Ω
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
400
400
±
20
10
6.3
40
125
1.0
4.0
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(•) Pulse width limited by safe operating area
(
1
) I
SD
≤10
A, di/dt
≤120 Α/µs,
V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
October 1998
1/8