®
IRF730
N - CHANNEL 400V - 0.75
Ω
- 5.5A - TO-220
PowerMESH™ MOSFET
TYPE
IRF730
s
s
s
s
s
V
DSS
400 V
R
DS(on)
< 1
Ω
I
D
5.5 A
TYPICAL R
DS(on)
= 0.75
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
t ot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
o
Value
400
400
±
20
5.5
3.5
22
100
0.8
4.0
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
(•) Pulse width limited by safe operating area
(
1
) I
SD
≤5.5
A, di/dt
≤ 90 Α/µs,
V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
1/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
