ESM6045DV
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.5
1.2
0.05
o
o
o
C/W
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
#
I
CEV
#
I
EBO
#
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -5)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
clamp
= 450 V
I
C
= 70 A
I
C
I
C
I
C
I
C
=
=
=
=
50
50
70
70
A
A
A
A
V
CE
= 5 V
I
B
I
B
I
B
I
B
=
=
=
=
1
1
4
4
A
A
A
A
T
j
= 100 C
T
j
= 100
o
C
T
j
= 100
o
C
375
o
Min.
Typ.
Max.
1.5
22
1
15
1
Unit
mA
mA
mA
mA
mA
V
T
j
= 100 C
T
j
= 100 C
o
o
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
h
FE
∗
V
CE(sat)
∗
DC Current Gain
Collector-Emitter
Saturation Voltage
450
120
1.2
1.6
1.35
1.7
2.3
2.4
450
6
9
2
2
3
V
V
V
V
V
V
A/µs
V
V
BE(sat)
∗
di
C
/dt
V
CE
(3
µs)••
V
CE
(5
µs)••
t
s
t
f
t
c
V
CEW
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
Storage Time
Fall Time
Cross-over Time
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
Reverse Recovery
Current
I
C
= 70 A
I
C
= 70 A
I
B
= 4 A
I
B
= 4 A
V
CC
= 300 V R
C
= 0
t
p
= 3
µs
I
B1
= 1.5 A T
j
= 100
o
C
V
CC
= 300 V R
C
= 6
Ω
I
B1
= 1.5 A T
j
= 100
o
C
V
CC
= 300 V R
C
= 6
Ω
I
B1
= 1.5 A T
j
= 100
o
C
I
C
= 50 A V
CC
= 50 V
V
BB
= -5 V R
BB
= 0.3
Ω
V
clamp
= 450 V I
B1
= 1 A
L = 0.05 mH T
j
= 100
o
C
I
CWoff
= 84 A I
B1
= 4 A
V
BB
= -5 V V
CC
= 50 V
L = 0.03 mH R
BB
= 0.3
Ω
T
j
= 125
o
C
I
F
= 70 A
T
j
= 100
o
C
V
CC
= 200 V I
F
= 70 A
di
F
/dt = -375 A/µs L < 0.05
µH
T
j
= 100
o
C
3
4.5
V
3.5
0.3
0.8
450
5.5
0.5
1.7
µs
µs
µs
V
V
F
∗
I
RM
1.6
38
1.9
45
V
A
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
P = 1.5 I
F(AV)
+ 0.0055 I
2F(RMS)
V
F
= 1.5 + 0.0055 I
F
2/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
