ESDAxxSC5 / ESDAxxSC6
Fig. 1:
Peak power dissipation versus initial
junction temperature.
Ppp[Tj initial]/Ppp[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5000
Fig. 2:
Peak pulse power versus exponential pulse
duration (Tj initial = 25 °C).
Ppp(W)
ESDA5V3SC5/SC6
&
ESDA6V1SC5/SC6
1000
ESDA14V2SC5/SC6
&
ESDA25SC6
Tj initial(°C)
tp(µs)
0
25
50
75
100
125
150
100
1
10
100
Fig. 3:
Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5
µs.
Ipp(A)
50.0
10.0
ESDA25SC5/SC6
ESDA14V2SC5/SC6
ESDA6V1SC5/SC6
ESDA5V3SC5/SC6
Fig. 4:
Capacitance versus reverse applied
voltage (typical values).
C(pF)
500
F=1MHz
Vosc=30mV
200
100
50
ESDA5V3SC5/SC6
ESDA6V1SC5/SC6
1.0
ESDA14V2SC5/SC6
tp=2.5µs
20
VR(V)
ESDA25SC6
Vcl(V)
0.1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
10
1
2
5
10
20
50
Fig. 5:
Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
200
100
ESDA14V2SC5/SC6
&
ESDA6V1SC5/SC6
Fig. 6:
Peak forward voltage drop versus peak
forward current (typical values).
IFM(A)
5.00
1.00
ESDA5V3SC5/SC6
ESDA14V2SC5/SC6
&
ESDA6V1SC5/SC6
ESDA25SC6
ESDA25SC6
10
Tj(°C)
1
25
50
75
ESDA5V3SC5/SC6
0.10
VFM(V)
100
125
Tj=25°C
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
