DALC112S1
TYPICAL APPLICATION
Vcc
DALC112S1
ABSOLUTE MAXIMUM RATINGS
Symbol
(Tamb =25°C).
Parameter
Value
Unit
VRRM
Peak reverse voltage per diode
18
V
Tstg
Tj
Storage temperaturerange
Maximum junctiontemperature
-55 to + 150
150
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
(Tamb =25°C).
Parameter
Typ.
Max.
Unit
VF
IR
Forward voltage
Reverseleakage current per diode
Input capacitance betweenLine and GND
IF = 50 mA
VR = 15 V
1.3
2
V
µ
A
C
Vcc = 5 V, VRMS = 30 mV, F = 1 MHz
7
pF
(see figure 1 below)
Fig 1 :
Input capacitancemeasurement
REF2
CC
+V connected between REF1 and REF2
Input applied :
Vcc = 5V, VRMS= 30 mV, F = 1 MHz
I/O
V
CC
G
REF1
2/3
STMICROELECTRONICS [ ST ]
