BULB39D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 850 V
VCE = 850 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
100
500
µA
µA
o
Tj = 125 C
IEBO
Emitter Cut-off Current VEB = 9 V
(IC = 0)
100
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
450
V
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2.5 A
IB = 0.2 A
IB = 0.5 A
0.13
0.5
1.1
V
V
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2.5 A
IB = 0.2 A
IB = 0.5 A
1.1
1.3
V
V
DC Current Gain
IC = 5 A
IC = 10 mA
VCE = 10 V
VCE = 5 V
4
10
VCEW
Maximum Collector
Emitter Voltage
Without Snubber
450
V
IC = 6 A
VBB = -2.5 V
tp = 10 µs
RBB = 0 Ω
L = 50µH
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2.5 A
VBE(off) = -5 V
VCL = 300 V
IB(on) = 0.5 A
RBB = 0 Ω
L = 1 mH
ts
tf
0.7
50
1.5
100
µs
ns
Vf
Diode Forward Voltage IC = 2 A
1.5
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
STMICROELECTRONICS [ ST ]
