BUL38D
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junct ion-Case
Thermal Resistance Junct ion-Ambient
Max
Max
1.56
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Cond ition s
V
CE
= 800 V
V
CE
= 800 V
V
CE
= 450 V
I
C
= 100 mA
L = 25 mH
450
T
j
= 125 C
o
Min.
Typ .
Max.
100
500
250
Un it
µA
µA
µA
V
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat )
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitt er
Saturation Voltage
DC Current Gain
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
C
= 10 mA
I
C
= 0.5 A
I
C
= 2 A
Group A
Group B
I
C
= 2.5 A
I
B1
= -I
B2
= 0.5 A
I
C
= 2 A
V
BE(of f)
= -5 V
V
CL
= 250 V
I
C
= 2 A
V
BE(of f)
= -5 V
V
CL
= 250 V
o
T
j
= 125 C
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.75 A
I
B
= 0.2 A
I
B
= 0.4 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
9
0.5
0.7
1.1
1.1
1.2
10
60
13
22
V
CC
= 150 V
t
p
= 30
µs
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
1.0
23
32
2.2
0.8
1
55
1.3
100
1.5
1.8
100
V
V
V
V
V
V
V
BE(s at)
∗
h
F E
∗
t
s
t
f
t
s
t
f
t
s
t
f
V
f
RESISTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
µs
µs
µs
ns
µs
ns
V
Diode F orward Voltage I
C
= 2 A
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %.
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
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