BU406
ABSOLUTE MAXIMUM RATING
NPN PLANAR TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (I
E
=0)
V
CBO
400
V
Collector-Emitter Voltage (V
BE
=-1.5V)
V
CEV
400
V
Collector-Emitter Voltage (I
B
=0)
V
CEO
200
V
Emitter-Base Voltage (I
C
=0)
V
EBO
6
V
Collector Current
I
C
7
A
Collector Peak Current (repetitive)
I
CM
10
A
Collector Peak Current (tp=10ms)
I
CM
15
A
Base Current
I
B
4
A
Collector Dissipation (T
C
≤25℃)
P
C
60
W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
70
2.08
UNIT
℃/W
℃
/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collect Cutoff Current (V
BE
=0)
SYMBOL
I
CES
TEST CONDITIONS
V
CE
=400V
V
CE
=250V T
C
=150°C
V
CE
=250V
V
BE
=6V
I
C
=5A, I
B
=0.5A
I
C
=5A, I
B
=0.5A
V
CE
=10V, I
C
=500mA
I
C
=500mA, V
CE
=10V
I
C
=5A, I
B
=0.5A
V
CE
=40V, t=10ms
MIN
TYP
MAX
5
100
1
1
1
1.2
240
0.75
4
UNIT
mA
µA
mA
mA
V
V
MHz
µs
A
Emitter Cut-off Current (I
C
=0)
I
EBO
Collector-Emitter Saturation Voltage
V
CE(SAT)*
Base-Emitter Saturation Voltage
V
BE(SAT)*
DC Current Gain
h
FE
Transition Frequency
f
T
Turn-off Time
t
OFF
Second Breakdown Collector Current
Is/b
*
Pulse duration=300µs, duty cycle 1.5%
70
10
CLASSIFICATION OF h
FE
RANK
RANGE
A
70 ~ 120
B
110 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-021,D
STMICROELECTRONICS [ STMICROELECTRONICS ]
