®
BU208A
BU508A/BU508AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
JEDEC TO-3 METAL CASE.
TO-3
1
2
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured
using
Multiepitaxial
Mesa
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
3
2
3
2
TO-218
1
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
TO - 3
Total Dissipation at T
c
= 25
o
C
St orage Temperature
Max. Operating Junction Temperature
150
175
Value
1500
700
10
8
15
TO - 218
125
150
ISOW AT T218
50
-65 to 150
150
W
o
o
Unit
V
V
V
A
A
-65 to 175 -65 to 150
C
C
1/8
November 1999
STMICROELECTRONICS [ STMICROELECTRONICS ]
