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BTA41-600B 参数 Datasheet PDF下载

BTA41-600B图片预览
型号: BTA41-600B
PDF下载: 下载PDF文件 查看货源
内容描述: 40A双向可控硅 [40A TRIACs]
分类和应用: 栅极触发装置可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 163 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-247AD
Dim.
A
B
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
G
T2
T1
T2
C
D
E
F
G
H
G
T1
J
K
L
M
N
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for
fusing
Critical rate of rise of on-state current
_
I
G
= 2 x
I
GT
, tr < 100 ns
TO-247AD
F = 60 Hz
F = 50 Hz
Tc = 80 °C
t = 16.7 ms
t = 20 ms
Value
41
420
400
880
Tj = 125°C
50
Unit
A
A
A
²
s
A/µs
tp = 10 ms
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature
range
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
V
DRM
/V
RRM
+ 100
V
A
W
°C
8
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I- III-IV
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 33
R
L
= 3.3 k
Tj = 125°C
Test Conditions
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
Value
50
100
1.3
0.2
80
70
160
500
10
V/µs
A/ms
Unit
mA
V
V
mA
mA