BDX53B - BDX53C - BDX54B - BDX54C
THERMAL DATA
R
thj -case
R
thj -amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2.08
70
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbo l
I
CBO
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Con ditions
for
BDX53B/54B
for
BDX53C/54C
for
BDX53B/54B
for
BDX53C/54C
V
EB
= 5 V
I
C
= 100 mA
for
BDX53B/54B
for
BDX53C/54C
I
B
=12 mA
I
B
=12 mA
V
CE
= 3 V
750
1.8
2.5
2.5
V
V
80
100
2
2.5
V
CB
= 80 V
V
CB
= 100V
V
CE
= 40 V
V
CE
= 50V
Min.
T yp.
Max.
0.2
0.2
0.5
0.5
2
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
CEO(s us)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
h
F E
∗
V
F
∗
Collector-emitter
Saturation Voltage
Base-emitter
Saturation Voltage
DC Current Gain
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
Parallel-diode Forward I
F
= 3 A
Voltage
I
F
= 8 A
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curve
2/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
