BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.12
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
Test Cond ition s
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
C
= 100 C
o
Min.
Typ .
Max.
0.2
2
0.5
2
Un it
mA
mA
mA
mA
V
CE
= half rated V
CEO
V
EB
= 5 V
I
C
= 50 mA
for
BD677/677A/678/678A
for
BD679/679A/680/680A
for
BD681/682
for
BD677/678/679/680/681/682
I
C
= 1.5 A
I
B
= 30 mA
for
BD677A/678A/679A/680A
I
B
= 40 mA
I
C
= 2 A
for
BD677/678/679/680/681/682
V
CE
= 3 V
I
C
= 1.5 A
for
BD677A/678A/679A/680A
V
CE
= 3 V
I
C
= 2 A
for
BD677/678/679/680/681/682
I
C
= 1.5 A
V
CE
= 3 V
for
BD677A/678A/679A/680A
V
CE
= 3 V
I
C
= 2 A
I
C
= 1.5 A
V
CE
= 3 V
f = 1MHz
750
750
1
V
CEO(sus )
∗
60
80
100
2.5
2.8
2.5
2.5
V
V
V
V
V
V
V
V
CE(sat )
∗
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
V
BE
∗
DC Current G ain
h
FE
∗
h
f e
Small Signal Current
Gain
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
Derating Curve
2/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
