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BD533_03 参数 Datasheet PDF下载

BD533_03图片预览
型号: BD533_03
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率晶体管 [COMPLEMENTARY SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 354 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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BD533 BD534 BD535 BD536 BD537
Table 3.
Electrical characteristics
Absolute maximum ratings
(T
case
= 25°C; unless otherwise specified)
Table 4.
Symbol
I
CBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
(1)
Test Conditions
V
CB
= rated V
CBO
for BD533/534
for BD535/536
for BD537
V
EB
= 5V
I
C
= 100mA
for BD533/534
for BD535/536
for BD537
I
C
= 2A
__
I
C
= 6A
__
I
C
= 2A
___
I
B
= 0.2A
I
B
= 0.6A
V
CE
= 2V
V
CE
= 45 V
V
CE
= 60 V
V
CE
= 80 V
Min.
Typ.
Max.
0.1
0.1
0.1
0.1
1
Unit
mA
mA
mA
mA
mA
V
V
V
I
CES
I
EBO
V
CEO(sus)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter voltage
45
60
80
0.8
0.8
1.5
V
CE(sat)(1)
V
BE(1)
V
V
V
h
FE(1)
DC current gain
I
C
= 10mA__ V
CE
= 5V
for BD533/534
for BD535/536
for BD537
I
C
= 500mA_ V
CE
= 2V
I
C
= 2A_
V
CE
= 2V
for BD533/534
for BD535/536
for BD537
20
20
15
40
25
25
15
1. Pulsed duration = 300 ms, duty cycle
≥1.5%.
Note:
For PNP types voltage e current values are negative.
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