BD433/434/435/436/437/438
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.5
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
for
BD433/434
for
BD435/436
for
BD437/438
for
BD433/434
for
BD435/436
for
BD437/438
V
EB
= 5 V
I
C
= 100 mA
for
BD433/434
for
BD435/436
for
BD437/438
I
B
= 0.2 A
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 5 V
V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 5 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 1 V
V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
V
CE
= 1 V
V
CE
= 1 V
3
40
40
30
85
50
50
40
1.4
MHz
22
32
45
0.2
0.2
0.2
0.58
1.1
1.1
1.2
130
130
130
140
0.5
0.5
0.6
V
CB
= 22 V
V
CB
= 32 V
V
CB
= 45 V
V
CE
= 22 V
V
CE
= 32 V
V
CE
= 45 V
Min.
Typ.
Max.
100
100
100
100
100
100
1
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
V
V
V
V
I
CES
I
EBO
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
C
= 2 A
V
BE
∗
Base-Emitter Voltage
I
C
= 10 mA
I
C
= 2 A
h
FE
∗
DC Current Gain
I
C
= 10 mA
I
C
= 500 mA
I
C
= 2 A
h
FE1
/h
FE2
∗
Matched Pair
f
T
Transition frequency
IC = 500 mA
I
C
= 250 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
