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BD236 参数 Datasheet PDF下载

BD236图片预览
型号: BD236
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率晶体管 [COMPLEMENTARY SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 5 页 / 78 K
品牌: STMICROELECTRONICS [ ST ]
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BD235/BD236/BD237/BD238  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
5
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = rated VCEO  
VCE = rated VCEO Tc = 150 oC  
Min.  
Typ.  
Max.  
Unit  
ICBO  
Collector Cut-off  
Current (IE = 0)  
0.1  
2
mA  
mA  
IEBO  
Emitter Cut-off Current VEB = 5 V  
(IC = 0)  
1
mA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
IC = 100 mA  
for BD235/BD236  
for BD237/BD238  
60  
80  
V
V
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 1 A  
IB = 0.1 A  
0.6  
1.3  
V
VBE  
hFE  
Base-Emitter Voltage  
DC Current Gain  
IC = 1 A  
VCE = 2 V  
VCE = 2 V  
V
IC = 150 mA  
IC = 1 A  
40  
25  
VCE = 2 V  
VCE = 10 V  
VCE = 2 V  
fT  
Transition frequency  
IC = 250 mA  
IC = 150 mA  
3
MHz  
h
FE1/hFE2 Matched Pairs  
1.6  
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
Safe Operating Area  
Derating Curves  
2/5  
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