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BD135-16 参数 Datasheet PDF下载

BD135-16图片预览
型号: BD135-16
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTORS]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 9 页 / 158 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
BD135 - BD136 - BD139 - BD140
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Value
Parameter
Polarity
Test conditions
Min. Typ. Max.
NPN
V
CB
= 30 V
V
CB
= 30 V, T
C
= 125 °C
V
CB
= -30 V
V
CB
= -30 V, T
C
= 125 °C
V
EB
= 5 V
V
EB
= -5 V
I
C
= 30 mA
BD135
BD139
I
C
= -30 mA
BD136
BD140
I
C
= 0.5 A, I
B
= 0.05 A
I
C
= -0.5 A, I
B
= -0.05 A
I
C
= 0.5 A, V
CE
= 2 V
I
C
= -0.5 A, V
CE
= -2 V
I
C
= 5 mA, V
CE
= 2 V
I
C
= 150 mA, V
CE
= 2 V
I
C
= 0.5 A, V
CE
= 2 V
I
C
= -5 mA, V
CE
= -2 V
I
C
= -150 mA, V
CE
= -2 V
I
C
= -0.5 A, V
CE
= -2 V
I
C
= 150 mA, V
CE
= 2 V
BD139-10
BD135-16/BD139-16
25
40
25
25
40
25
63
100
45
80
-45
-80
0.5
-0.5
1
-1
250
0.1
10
-0.1
-10
10
-10
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Unit
I
CBO
Collector cut-off
current (I
E
=0)
PNP
Emitter cut-off current
(I
C
=0)
NPN
PNP
NPN
I
EBO
V
CEO(sus)
(1)
Collector-emitter
sustaining voltage
(I
B
=0)
PNP
NPN
PNP
NPN
Base-emitter voltage
PNP
NPN
V
CE(sat) (1)
(1)
Collector-emitter
saturation voltage
V
BE
h
FE (1)
DC current gain
PNP
250
NPN
h
FE (1)
h
FE
groups
PNP
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
160
250
160
250
I
C
= -150 mA, V
CE
= -2 V
BD140-10
63
BD136-16/BD140-16
100
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