BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
PNP COMPLEMENTS ARE BCP52 AND
BCP53 RESPECTIVELY
2
1
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CER
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
BCP55
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Emitter Voltage (R
BE
= 1KΩ)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BCP56
100
80
100
5
1
1.5
0.1
0.2
2
-65 to 150
150
60
60
60
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
October 1997
1/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
