BC857/BC858
THERMAL DATA
R
t hj-amb
•
R
th j-SR
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
420
330
o
o
C/W
C/W
•
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Cond ition s
V
CE
= -30 V
V
CE
= -30 V
I
C
= -10
µA
for
BC857
for
BC858
I
C
= -10
µA
for
BC857
for
BC858
I
C
= -2 mA
for
BC857
for
BC858
I
C
= -10
µA
for
BC857
for
BC858
I
C
= -10 mA
I
C
= -100 mA
I
C
= -10 mA
I
C
= -100 mA
I
C
= -2 mA
I
C
= -10 mA
I
C
= -10
µA
for
g rou p A
for
g rou p B
I
C
= -2 mA
for
g rou p A
for
g rou p B
I
B
= -0.5 mA
I
B
= -5 mA
I
B
= -0.5 mA
I
B
= -5 mA
V
CE
= -5 V
V
CE
= -5 V
V
CE
= -5 V
90
150
V
CE
= -5 V
110
200
180
290
150
6
2
1.2
10
4
220
450
MHz
pF
dB
dB
-0.6
T
a mb
= 150 C
-50
-30
-50
-30
-45
-30
-6
-5
-0.09
-0.25
-0.75
-0.9
-0.66
-0.72
-0.75
-0.82
-0.3
-0.65
o
Min.
Typ .
Max.
-15
-5
Un it
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
(BR)CES
∗
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
V
( BR)CBO
∗
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
( BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
V
CE(sat )
∗
V
BE(s at)
∗
V
BE(on)
∗
h
FE
f
T
C
CB
NF
Transition F requency
Collector Base
Capacitance
Noise Figure
I
C
= -10 mA V
CE
= -5 V f = 100MHz
I
E
= 0
V
CB
= -10 V
f = 1 MHz
f = 1KHz
V
CE
= -5 V I
C
= -0.2 mA
∆f
= 200 Hz R
G
= 2 KΩ
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
