BC847
THERMAL DATA
R
t hj-amb
•
R
th j-SR
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
420
330
o
o
C/W
C/W
•
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Cond ition s
V
CE
= 30 V
V
CE
= 30 V
I
C
= 10
µA
T
amb
= 150 C
50
o
Min.
Typ .
Max.
15
5
Un it
nA
µA
V
V
(BR)CES
∗
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
V
( BR)CBO
∗
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
( BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
Transition F requency
Collector Base
Capacitance
Collector Emitter
Capacitance
Noise Figure
Input Impedance
Reverse Voltage Ratio
Small Signal Current
Gain
Output Admittance
I
C
= 10
µA
50
V
I
C
= 2 mA
45
V
I
C
= 10
µA
6
V
V
CE(sat )
∗
V
BE(s at)
∗
V
BE(on)
∗
h
FE
∗
f
T
C
CB
C
EB
NF
h
i e
∗
h
re
∗
h
fe
∗
h
oe
∗
I
C
= 10 mA
I
C
= 100 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 2 mA
I
C
= 10 mA
I
C
= 10
µA
I
C
= 2 mA
I
E
= 0
I
C
= 0
I
B
= 0.5 mA
I
B
= 5 mA
I
B
= 0.5 mA
I
B
= 5 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
0.58
0.09
0.2
0.75
0.9
0.63
0.7
150
290
300
0.25
0.6
V
V
V
V
0.7
0.77
450
V
V
200
I
C
= 10 mA V
CE
= 5 V f = 100MHz
V
CB
= 10 V
V
EB
= 0.5 V
f = 1 MHz
f = 1 MHz
MHz
4.5
pF
pF
10
8.5
dB
KΩ
10
-4
9
2
3.2
4.5
2
330
30
60
V
CE
= 5 V I
C
= 0.2 mA f = 1KHz
∆f
= 200 Hz R
G
= 2 KΩ
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
I
C
= 2 mA
I
C
= 2 mA
I
C
= 2 mA
I
C
= 2 mA
f = 1KHz
f = 1KHz
f = 1KHz
f = 1KHz
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
