BC817-25 / BC817-40
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
500
o
C/W
•
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
E
= 0)
Test Conditions
V
CB
= 20 V
V
CB
= 20 V
V
EB
= 5 V
I
C
= 10 mA
45
T
C
= 150 C
o
Min.
Typ.
Max.
100
5
100
Unit
nA
µA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(on)
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
I
C
= 500 mA
I
C
= 500 mA
I
C
= 100 mA
for
BC817-25
for
BC817-40
I
B
= 50 mA
V
CE
= 1 V
V
CE
= 1 V
160
250
0.7
1.2
V
V
f
T
C
CBO
Transition Frequency
I
C
= 10 mA V
CE
= 5 V f =100 MHz
f = 1 MHz
Collector-Base
I
E
= 0
V
CB
= 10 V
Capacitance
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
100
od
r
8
s)
t(
uc
400
600
MHz
pF
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
