BAT54, A, C, S
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
°
Rth (j-a) Junction to ambient (*)
500
C/W
(*) Mounted on epoxy board with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Parameters
Tests conditions
Min. Typ. Max.
Unit
°
VF *
Forward voltage drop
Tj = 25 C
IF = 0.1 mA
IF = 1 mA
240
320
400
500
900
1
mV
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 30 V
°
µ
A
IR **
Reverse leakage current
Tj = 25 C
°
Tj = 100 C
100
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
(Tj = 25 °C)
Symbol
Parameters
Junction
Tests conditions
= 1 V F = 1 MHz
Min.
Typ. Max. Unit
°
10
pF
C
Tj = 25 C
VR
capacitance
trr
Reverse recovery
time
IF = 10 mA IR = 10 mA Tj = 25°C
Irr = 1 mA RL = 100 Ω
5
ns
Fig.1 :
average forward current.
Average forward power dissipation versus
Fig.2 :
Average forward current versus ambient
δ
temperature ( = 1).
PF(av)(W)
IF(av)(A)
0.35
0.35
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
0.30
0.25
0.20
0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
δ = 1
0.10
T
T
0.05
Tamb(°C)
tp
=tp/T
δ
IF(av) (A)
0.15 0.20
tp
=tp/T
δ
0.00
0
25
50
75
100
125
150
0.00
0.05
0.10
0.25
0.30
2/5
STMICROELECTRONICS [ ST ]
