BAR 18 / BAS70-04 06
Fig. 2:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+1
Tj=100°C
Fig. 3:
Reverse leakage current versus junction
temperature (typical values)
IR(µA)
5E+2
1E+2
VR=70V
1E+0
1E+1
1E-1
Tj=25°C
1E+0
1E-1
1E-2
VR(V)
1E-3
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Tj(°C)
1E-2
0
25
50
75
100
125
150
Fig. 4:
Junction capacitance versus reverse voltage
applied (typical values).
C(pF)
2.0
1.0
F=1MHz
Tj=25°C
Fig. 5:
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
Zth(j-a)/Rth(j-a)
1.00
δ
= 0.5
δ
= 0.2
0.10
δ
= 0.1
T
0.1
VR(V)
1
10
100
Single pulse
tp(s)
1E-2
1E-1
1E+0
δ
=tp/T
tp
0.01
1E-3
1E+1
1E+2
Fig. 6:
Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
350
300
250
200
S(Cu) (mm²)
150
0
5
10
15
20
25
30
35
40
45
50
P=0.25W
3/4
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