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2STC4468 参数 Datasheet PDF下载

2STC4468图片预览
型号: 2STC4468
PDF下载: 下载PDF文件 查看货源
内容描述: 高功率NPN外延平面型双极晶体管 [High power NPN epitaxial planar bipolar transistor]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 9 页 / 214 K
品牌: STMICROELECTRONICS [ ST ]
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2STC4468  
Electrical characteristics  
1
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
CASE  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
= 200V  
Min.  
Typ.  
Max.  
Unit  
Collector cut-off current  
I
V
V
0.1  
µA  
CBO  
CB  
EB  
(I = 0)  
E
Emitter cut-off current  
I
= 6V  
0.1  
µA  
V
EBO  
(I = 0)  
C
Collector-emitter breakdown  
(1)  
(BR)CEO  
I = 50mA  
140  
200  
6
V
C
voltage (I = 0)  
B
Collector-emitter breakdown  
V
I = 100µA  
V
(BR)CBO  
C
voltage (I = 0)  
E
Collector-emitter breakdown  
(1)  
(BR)EBO  
I = 1mA  
V
V
E
voltage (I = 0)  
C
I = 5A  
I = 500mA  
B
0.5  
0.7  
V
V
C
Collector-emitter saturation  
voltage  
(1)  
V
CE(sat)  
I = 7A  
I = 700mA  
C
B
V
V
= 5V  
I = 5A  
Base-emitter voltage  
DC current gain  
1.3  
V
BE  
CE  
C
I = 3A  
V
V
= 4V  
= 4V  
70  
50  
140  
C
CE  
CE  
h
FE  
I = 5A  
C
f
I = 0.5A  
V
= 12V  
Transition frequency  
Collector-base capacitance  
Resistive Load  
Turn-on time  
20  
MHz  
pF  
T
C
CE  
C
I = 0  
V
= 10V f = 1MHz  
CB  
150  
CBO  
E
t
I = 5A  
V
= 60V  
CC  
0.22  
4.3  
µs  
µs  
µs  
on  
C
t
I
= -I = 0.5A  
B2  
Storage time  
stg  
B1  
t
Fall time  
0.5  
off  
Note: 1 Pulsed duration = 300 µs, duty cycle 1.5%  
3/9  
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