Electrical characteristics
2N7000 - 2N7002
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= max rating
V
DS
= max rating,
T
C
= 125°C
V
GS
= ± 18V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.5A
1
2.1
1.8
2
Min.
60
1
10
±100
3
5
5.3
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 10V
,
I
D
= 0.5A
Min.
Typ.
0.6
43
20
6
5
15
7
8
1.4
0.8
0.5
2
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 30V, I
D
= 0.5A
R
G
= 4.7Ω V
GS
= 4.5V
(see
V
DD
= 30V, I
D
= 1A,
V
GS
= 5V
(see
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/14
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